Pseudo-C11b phase formation of titanium disilicide during the C49 to C54 transition

Book · Thu Dec 31 04:00:00 EST 1998

OSTI ID:323522

Smith, P L; Brennan, B ^[1]; Ortega, R ^[2]

---

1. Advanced Micro Devices, Austin, TX (United States)
2. Advanced Materials Identification and Analysis Lab., Austin, TX (United States)

The formation of TiSi{sub 2} thin films using the SALICIDE process on doped and undoped silicon substrates was studied. XRD, TEM, AES, RBS and four probe Rs were used to characterize the material. Unit cell parameters and energetics were determined. Results confirm electrical and chemical signatures consistent with the known C49 conversion to C54. However, XRD indicated a structurally different intermediate phase occurs during the C49 to C54 transformation. Modeling was performed based on C11{sub b} structure (14/mmm) type, with the Ti and Si atoms arranged similarly to those in MoSi{sub 2}. The unit cell was determined to be a = 4.428 {angstrom}, b = 4.779 {angstrom}, c = 9.078 {angstrom} with a Fmmm space group and total pseudo-potential plane wave calculations based on crystallographic simulations of {minus}103.96 ev/Atom.

• OSTI ID: 323522
• Report Number(s): CONF-971201--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
DEPOSITION
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
LATTICE PARAMETERS
PHASE STUDIES
SIMULATION
THIN FILMS
TITANIUM SILICIDES
X-RAY DIFFRACTION