The formation of Cu{sub 3}Si from Cu/a-Si multilayers

Book · Thu Dec 31 04:00:00 EST 1998

OSTI ID:323518

Chromik, R R; Neils, W K; Cotts, E J ^[1]

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1. Binghamton Univ., NY (United States). Dept. of Physics

The kinetics of the formation of Cu{sub 3}Si in Cu/a-Si diffusion couples have been investigated by means of differential scanning calorimetry and x-ray diffraction. Multilayered composites of average stoichiometry Cu{sub 3}Si were prepared by sputter deposition with individual layer thicknesses varying in different samples between 2 and 100 nm. The authors observed diffusion limited growth of Cu{sub 3}Si upon annealing these diffusion couples below 500 K. Reaction constants were measured for a temperature range of 455 to 495 K for thicknesses of growing Cu{sub 3}Si between 2.6 and 80 nm. The temperature dependence of the reaction constant, k{sup 2}, was characterized as k{sup 2} = k{sub o} exp({minus}E{sub a}/k{sub b}T) with activation energy, E{sub a} = 1.0 eV/atom and pre-factor, k{sub o} = 1.9 {times} 10{sup {minus}3} cm{sup 2}/s.

• OSTI ID: 323518
• Report Number(s): CONF-971201--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
ANNEALING
CALORIMETRY
CHEMICAL REACTIONS
COMPOSITE MATERIALS
COPPER
COPPER SILICIDES
EXPERIMENTAL DATA
PHASE STUDIES
SILICON
X-RAY DIFFRACTION