Recrystallization of Si-, As- and BF{sub 2}-implanted, bonded SOI
- Joint Research Center for Atom Technology-Angstrom Technology Partnership, Tsukuba, Ibaraki (Japan)
- Hitachi, Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.
Conventional and high-resolution cross-sectional TEM observations have been carried out on Si-, As- and BF{sub 2}-implanted, bonded 100-nm-thick (001) SOI layers having polycrystalline Si (poly-Si) masks followed by annealing at 600 C. Amorphized SOI layers by these ion implantations are recrystallized through lateral solid-phase seeding epitaxy (L-SPE) by single crystal SOI under the poly-Si mask as a seed. The recrystallization of these SOI layers is completed in the order of BF{sub 2}-, Si-, and as-implanted layers by <110>-directed L-SPE, although the recrystallized layers have a high-density of {l_brace}111{r_brace} twins due to {l_brace}111{r_brace} facet formation at the growth front occurring during the first 30 s of annealing, independent of implanted ions. ON the other hand, in the case of <100>-directed L-SPE, the growth of {l_brace}110{r_brace} faceted regions progresses after annealing for a few tens of minutes before folded {l_brace}111{r_brace} facets are formed, resulting in a good crystal quality region of 0.1--0.2 {micro}m remaining, measured from the mask edge.
- OSTI ID:
- 323502
- Report Number(s):
- CONF-971201--
- Country of Publication:
- United States
- Language:
- English
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