Sub-200 Oe giant magnetoresistance in manganite tunnel junctions
Book
·
OSTI ID:323416
- Brown Univ., Providence, RI (United States). Dept. of Physics
- IBM Research Div., Yorktown Heights, NY (United States). T.J. Watson Research Center
Metallic manganite oxides, La{sub 1{minus}x}D{sub x}MnO{sub 3} (D = Sr, Ca, etc.), display colossal magnetoresistance (CMR) near their magnetic phase transition temperatures ({Tc}) when subject to a Tesla-scale magnetic field. This phenomenal effect is the result of the strong interplay inherent in this class of materials among electronic structure, magnetic ordering, and lattice dynamics. Though fundamentally interesting, the CMR effect achieved only at large fields poses severe technological challenges to potential applications in magnetoelectronic devices, where low field sensitivity is crucial. Among the objectives of the research effort involving manganite materials is to reduce the field scale of MR by designing and fabricating tunnel junctions and other structures rich in magnetic domain walls. The junction electrodes were made of doped manganite epitaxial films, and the insulating barrier of SrTiO{sub 3}. The interfacial epitaxy has been imaged by using high-resolution transmission electron microscopy (TEM). The authors have used self-aligned lithographic process to pattern the junctions to micron scale in size. Large MR values close to 250% at low fields of a few tens of Oe have been observed. The mechanism of the spin-dependent transport is due to the spin-polarized tunneling between the half-metallic electrodes, in which the spins of the conduction electrons are nearly fully polarized. The authors present results of field and temperature dependence of MR in these structures and discuss the electronic structure of the manganite inferred from tunneling measurement. Results of large MR at low fields due to the grain-boundary effect is also presented.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States)
- OSTI ID:
- 323416
- Report Number(s):
- CONF-971201--; ISBN 1-55899-399-1
- Country of Publication:
- United States
- Language:
- English
Similar Records
Low-field colossal magnetoresistance in manganite tunnel junctions
Origin of colossal magnetoresistance in LaMnO 3 manganite
Magnetoresistance of lanthanum manganites with activation-type conductivity
Book
·
Wed Dec 30 23:00:00 EST 1998
·
OSTI ID:323417
Origin of colossal magnetoresistance in LaMnO 3 manganite
Journal Article
·
Wed Aug 12 20:00:00 EDT 2015
· Proceedings of the National Academy of Sciences of the United States of America
·
OSTI ID:1235118
Magnetoresistance of lanthanum manganites with activation-type conductivity
Journal Article
·
Wed May 15 00:00:00 EDT 2013
· Journal of Experimental and Theoretical Physics
·
OSTI ID:22126478