Sub-200 Oe giant magnetoresistance in manganite tunnel junctions
- Brown Univ., Providence, RI (United States). Dept. of Physics
- IBM Research Div., Yorktown Heights, NY (United States). T.J. Watson Research Center
Metallic manganite oxides, La{sub 1{minus}x}D{sub x}MnO{sub 3} (D = Sr, Ca, etc.), display colossal magnetoresistance (CMR) near their magnetic phase transition temperatures ({Tc}) when subject to a Tesla-scale magnetic field. This phenomenal effect is the result of the strong interplay inherent in this class of materials among electronic structure, magnetic ordering, and lattice dynamics. Though fundamentally interesting, the CMR effect achieved only at large fields poses severe technological challenges to potential applications in magnetoelectronic devices, where low field sensitivity is crucial. Among the objectives of the research effort involving manganite materials is to reduce the field scale of MR by designing and fabricating tunnel junctions and other structures rich in magnetic domain walls. The junction electrodes were made of doped manganite epitaxial films, and the insulating barrier of SrTiO{sub 3}. The interfacial epitaxy has been imaged by using high-resolution transmission electron microscopy (TEM). The authors have used self-aligned lithographic process to pattern the junctions to micron scale in size. Large MR values close to 250% at low fields of a few tens of Oe have been observed. The mechanism of the spin-dependent transport is due to the spin-polarized tunneling between the half-metallic electrodes, in which the spins of the conduction electrons are nearly fully polarized. The authors present results of field and temperature dependence of MR in these structures and discuss the electronic structure of the manganite inferred from tunneling measurement. Results of large MR at low fields due to the grain-boundary effect is also presented.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States)
- OSTI ID:
- 323416
- Report Number(s):
- CONF-971201-; ISBN 1-55899-399-1; TRN: 99:004240
- Resource Relation:
- Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Science and technology of magnetic oxides; Hundley, M.F. [ed.] [Los Alamos National Lab., NM (United States)]; Nickel, J.H. [ed.] [Hewlett-Packard Labs., Palo Alto, CA (United States)]; Ramesh, R. [ed.] [Univ. of Maryland, College Park, MA (United States)]; Tokura, Yoshinori [ed.] [Univ. of Tokyo (Japan)]; PB: 375 p.; Materials Research Society symposium proceedings, Volume 494
- Country of Publication:
- United States
- Language:
- English
Similar Records
Short-range spin and charge correlations and local density of states in the colossal magnetoresistance regime of the single-orbital model for manganites.
Study of One- and Two-band Models for Colossal Magnetoresistive Manganites Using the Truncated Polynomial Expansion Method