Efficient growth of HTS films with volatile elements

Patent · Tue Dec 22 00:00:00 EST 1998

OSTI ID:321202

Siegal, M P; Overmyer, D L; Dominguez, F

A system is disclosed for applying a volatile element-HTS layer, such as Tl-HTS, to a substrate in a multiple zone furnace, said method includes heating at higher temperature, in one zone of the furnace, a substrate and adjacent first source of Tl-HTS material, to sublimate Tl-oxide from the source to the substrate; and heating at lower temperature, in a separate zone of the furnace, a second source of Tl-oxide to replenish the first source of Tl-oxide from the second source. 3 figs.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corp., Albuquerque, NM (United States)
• Patent Number(s): US 5,851,955/A/
• Application Number: PAN: 8-886,243
• OSTI ID: 321202
• Resource Relation: Other Information: PBD: 22 Dec 1998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
HIGH-TC SUPERCONDUCTORS
THALLIUM OXIDES
CRYSTAL GROWTH
ZONE MELTING
FURNACES