Total dose hardness of field programmable gate arrays

Journal Article · Wed Nov 30 23:00:00 EST 1994 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.340606· OSTI ID:32020

Lum, G K; May, R J; Robinette, L E ^[1]

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1. Lockheed Missiles and Space Co., Inc., Sunnyvale, CA (United States)

In this paper the authors present the effect of total dose ionization of nonhardened field programmable gate arrays considered for space applications. By irradiating test structures and modeling the circuits that include total dose degradation, the basic leakage mechanism in the design at elevated temperature can be understood. Results show that a large array of CMOS inverter structures will conduct large currents when the threshold voltages of the p- and n-channel transistors reach the transition point of switching. Results show that if the n- and p-channel thresholds were to be increased in the process, this problem can be mitigated and hardness above 100 krad(Si) can be achieved.

• OSTI ID: 32020
• Report Number(s): CONF-940726--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 41; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ELECTRONIC CIRCUITS
EXPERIMENTAL DATA
GATING CIRCUITS
LEAKAGE CURRENT
LOGIC CIRCUITS
PHYSICAL RADIATION EFFECTS
SPACE FLIGHT