Behavior of W and WSi(x) Contact Metallization on n- and p- Type GaN

Journal Article · Mon Jan 04 23:00:00 EST 1999 · Materials Research Society Internet Journal of Nitride Semiconductor Research

OSTI ID:3199

Abernathy, C R ^[1]; Cao, X A; Cole, M W; Eizenberg, M; Lothian, J R; Pearton, S J; Ren, F; Shul, R J; Zeitouny, A; Zolper, J C

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1. Sandia National Laboratories

Sputter-deposited W-based contacts on p-GaN (N{sub A} {approximately} 10{sup 18} cm{sup {minus}3}) display non-ohmic behavior independent of annealing temperature when measured at 25 C. The transition to ohmic behavior occurs above {approximately} 250 C as more of the acceptors become ionized. The optimum annealing temperature is {approximately} 700 C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700 C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to {approximately} 900 C.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 3199
• Report Number(s): SAND99-0016J
• Journal Information: Materials Research Society Internet Journal of Nitride Semiconductor Research, Journal Name: Materials Research Society Internet Journal of Nitride Semiconductor Research
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ELECTRIC CONTACTS
ELECTRICAL PROPERTIES
GALLIUM NITRIDES
MORPHOLOGY
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
TUNGSTEN
TUNGSTEN SILICIDES