Electron tunneling at the semiconductor-insulator-electrolyte interface. Photocurrent studies of the n-InP-alkanethiol-ferrocyanide system

Journal Article · Thu Nov 05 04:00:00 EST 1998 · Journal of Physical Chemistry B: Materials, Surfaces, Interfaces, amp Biophysical

DOI:https://doi.org/10.1021/jp9822485· OSTI ID:315967

Gu, Y; Waldeck, D H ^[1]

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1. Univ. of Pittsburgh, PA (United States). Dept. of Chemistry

The nature of electron tunneling through self-assembled monolayer films on n-InP semiconductor electrodes is explored. The photocurrent of a semiconductor cell is measured as a function of the thickness of an alkanethiol overlayer film. This work reports a detailed investigation into the photocurrent and its dependence on control parameters of the photoelectrochemical cell. This study demonstrates that the study of the photocurrent versus chain length of the alkanethiol can be used to examine how the electron-transfer rate constant depends on the thickness of the insulating layer--of particular interest is the ability to probe the distance dependence of the electronic coupling.

• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: FG02-89ER14062
• OSTI ID: 315967
• Journal Information: Journal of Physical Chemistry B: Materials, Surfaces, Interfaces, amp Biophysical, Journal Name: Journal of Physical Chemistry B: Materials, Surfaces, Interfaces, amp Biophysical Journal Issue: 45 Vol. 102; ISSN 1089-5647; ISSN JPCBFK
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALKANES
ELECTRON TRANSFER
FERROCYANIDES
INDIUM PHOSPHIDES
PHOTOCONDUCTIVITY
PHOTOELECTROCHEMICAL CELLS
SEMICONDUCTOR MATERIALS
THIOLS