Gas atomization processing of LaNi{sub 5{minus}x}M{sub x} modified with silicon TiN
- Ames Lab., IA (United States)
- California Inst. of Tech., Pasadena, CA (United States)
A high pressure gas atomization (HPGA) process has been employed to study microsegregation in LaNi{sub 4.75}Sn{sub 0.25} and LaNi{sub 4.6}Si{sub 0.4} alloy powders to serve as a basis for further investigations of low cost production of multicomponent alloys in combination with mishmetal (Mm). This investigation is an attempt to produce high quality powders for battery cathode fabrication that can be used in an as-atomized condition without prolong annealing, hydriding-dehydriding, and grinding. Argon atomizing gas was used in the HPGA process of the LaNi{sub 4.75}Sn{sub 0.25} and LaNi{sub 4.6}Si{sub 0.4} alloys to investigate rapid solidification effects on microsegregation. Short annealing treatments of 5 minutes at 900 C were able to homogenize both alloy compositions, eliminating solidification micro-segregation along the grain boundaries phases. The rapid homogenization can be attributed primarily to the refined cell structures in gas-atomized particles that provide short diffusion pathways for the dissolving elements.
- DOE Contract Number:
- W-7405-ENG-82; FG03-94ER14493
- OSTI ID:
- 308123
- Report Number(s):
- CONF-980405-; TRN: IM9907%%49
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 13-17 Apr 1998; Other Information: PBD: 1998; Related Information: Is Part Of Hydrogen in semiconductors and metals; Nickel, N.H. [ed.] [Hahn-Meitner-Inst., Berlin (Germany)]; Jackson, W.B. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Bowman, R.C. [ed.] [Jet Propulsion Lab., Pasadena, CA (United States)]; Leisure, R.G. [ed.] [Colorado State Univ., Fort Collins, CO (United States)]; PB: 469 p.; Materials Research Society symposium proceedings, Volume 513
- Country of Publication:
- United States
- Language:
- English
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