Hydrogen in GaN-experiments
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
- Plasma-Therm, Inc., St. Petersburg, FL (United States)
- Wilson, R.G., Stevenson Ranch, CA (United States)
- Army Research Office, Research Triangle Park, NC (United States)
- Lehigh Univ., Bethlehem, PA (United States). Dept. of Physics
Hydrogen is an important component of the gas phase growth chemistry for GaN (e.g., NH{sub 3}, (CH{sub 3}){sub 3} Ga) and the processing environment for subsequent device fabrication (e.g., SiH{sub 4} for dielectric deposition, NH{sub 3} or H{sub 2} annealing ambients), and is found to readily permeate into heteroepitaxial material at temperatures {le}200 C. Its main effect has been the passivation of Mg acceptors in p-GaN through formation of neutral Mg-H complexes, which can be dissociated through minority-carrier (electron) injection or simple thermal annealing. Atomic hydrogen is also found to passivate a variety of other species in GaN, as detected by a change in the electrical or optical properties of the material. An example is the increase in luminescence efficiency of Er{sup 3+} ions in AlN after hydrogenation, through passivation of non-radiative states that would be an alternative path for de-excitation. The injection of hydrogen during a large variety of device fabrication steps has been detected by SIMS profiling using {sup 2}H isotopic labeling. Basically all of the acceptor species in GaN, namely Mg, C, Ca and Cd are found to form complexes with hydrogen.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States); Office of Naval Research, Washington, DC (United States)
- OSTI ID:
- 308113
- Report Number(s):
- CONF-980405--
- Country of Publication:
- United States
- Language:
- English
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