Hydrogen in GaN

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:395026

Johnson, N M; Goetz, W; Neugebauer, J; Van de Walle, C G ^[1]

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1. Xerox Palo Alto Research Center, CA (United States)

Hydrogen is implicated in the low doping efficiency of acceptors (e.g., Mg) in MOCVD-grown GaN by the following observations: the well-established role of hydrogen in the same phenomenon in other semiconductors; re-passivation of thermally activated Mg in GaN upon exposure to NH{sub 3} or H at temperatures > 400 C; correlation between Mg and H concentrations; and computational studies on the diffusivities of charged H in GaN and on the configuration and stability of the Mg-H complex in GaN. Strong experimental evidence for the Mg-H complex comes from variable-temperature Hall effect measurements which reveal that after hydrogenation of activated GaN:Mg the hole mobility increases as the hole concentration decreases, which is consistent with removal of ionized scattering centers and not with the introduction of separate compensating defects. However, experimental evidence is also accumulating to suggest that the Mg activation process involves the generation or transformation of electrically active defects.

• OSTI ID: 395026
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
DEUTERIUM
DOPED MATERIALS
EFFICIENCY
ELECTRO-OPTICAL EFFECTS
ELECTRONIC STRUCTURE
EXPERIMENTAL DATA
GALLIUM NITRIDES
HALL EFFECT
HOLE MOBILITY
HYDROGEN
ION MICROPROBE ANALYSIS
MAGNESIUM
MASS SPECTROSCOPY
PASSIVATION
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES