X-ray scanning photoemission microscopy of titanium silicides and Al-Cu interconnects
- Center of X-ray Lithography, University of Wisconsin, Madison, Wisconsin (United States)
- Center of X-ray Optics, Lawrence National Berkeley Laboratory, Berkeley, California (United States)
We use x-ray spectromicroscopy in order to investigate current problems in microelectronics. In particular, we report here the results obtained by MAXIMUM, a scanning photoemission microscope recently installed at the Advanced Light Source (ALS), at the Lawrence Berkeley National Laboratory. MAXIMUM is a spectromicroscope based on multilayer optics at 130 eV, where the images are achieved by collecting the photoelectron emitted from the sample by means of an electron energy analyzer. The spatial resolution is 100 nm, and the spectral resolution is 200 meV. In order to show the capabilities of this instrument, we will discuss the formation of TiSi{sub 2} in patterned structures and the electromigration in AlCu lines. In the case of TiSi{sub 2}, we imaged lateral variations in the local chemistry of patterned samples with feature from 100 to 0.1 mm, which are attributed to the formation of different phases (C54 and C49). We studied the effect of electromigration in Al-Cu lines with different Cu content and width in situ, in order to distinguish different phases of Cu and follow its evolution electromigration proceeded. {copyright} {ital 1998 American Institute of Physics.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 306238
- Report Number(s):
- CONF-980364--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 449; ISSN 0094-243X; ISSN APCPCS
- Country of Publication:
- United States
- Language:
- English
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