Hydrogen-interstitial Zn defect complexes and their effects on the device characteristics of heteroepitaxial p{sup +}n InP cell structures
Book
·
OSTI ID:304403
- Ohio State Univ., Columbus, OH (United States)
- Essential Research, Inc., Cleveland, OH (United States)
Hydrogen passivation of Zn interstitial defects (Zn{sub i}) is shown to enhance the turn-on voltage (V{sub TO}) of heteroepitaxial p{sup +}n InP/GaAs cells. By using a combination of photoluminescence (PL), electrochemical C-V dopant profiling, secondary ion mass spectroscopy and current-voltage (I-V) measurements the authors demonstrate that the mechanism for this improvement results from reduction in recombination-generation and shunt losses due to hydrogen deactivation of Zn{sub i} defect complexes whose high concentration is due to the presence of dislocations. The deactivation of Zn{sub i} deep donors also results in an increase in the effective emitter acceptor concentration by {approximately}50% due to the elimination of the compensation effect introduced by active Zn{sub i} donors.
- OSTI ID:
- 304403
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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