Material quality and dislocation trapping in hydrogen passivated heteroepitaxial InP/GaAs and InP/Ge solar cells
Conference
·
OSTI ID:191218
- Ohio State Univ., Columbus, OH (United States)
- National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
Plasma hydrogenation has recently been demonstrated to be highly effective in passivating dislocations in heteroepitaxial InP and is a promising technique for achieving viable heteroepitaxial InP cells. In this paper, the effects of hydrogen on the fundamental properties of three dislocation related hole traps in heteroepitaxial InP/GaAs are presented. Hydrogen passivation significantly alters the dislocation trapping kinetics, causing point defect-like behavior consistent with a transformation from dislocation-related defect bands within the InP bandgap to a low concentration of individual deep levels after hydrogenation. Furthermore, hydrogen passivation is shown to shift the dominant space charge generation center from E{sub c}-0.71 eV to E{sub c}-0.92 eV, away from midgap. A model is proposed which explains these effects on the basis of decreased electronic interaction between dislocation sites. Finally, a comparison of InP material quality grown on GaAs, Ge and GaAs/Ge substrates is presented, and hydrogen passivation of InP/GaAs/Ge structures is reported.
- OSTI ID:
- 191218
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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Mon Dec 07 19:00:00 EST 2020
· Journal of Applied Physics
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OSTI ID:1760428