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Title: Texture etched ZnO:Al films as front contact and back reflector in amorphous silicon p-i-n and n-i-p solar cells

Abstract

This paper treats the use of texture etched ZnO:Al films in amorphous silicon solar cells. Chemically textured ZnO:Al films were implemented as a front TCO in p-i-n (superstrate) and n-i-p (substrate) solar cells, and in combination with Ag as a textured back reflector in n-i-p (substrate) solar cells. These cells exhibit excellent optical and light-trapping properties demonstrated by high short-circuit current densities. Adapted microcrystalline p-layers solve the ZnO/p-contact problem and thereby provide high fill factors and open-circuit voltages. The initial efficiencies so far obtained are close to 10% for p-i-n and 8% for n-i-p solar cells.

Authors:
; ; ; ; ; ;  [1]
  1. Forschungszentrum Juelich (Germany)
Publication Date:
OSTI Identifier:
304334
Report Number(s):
CONF-970953-
Journal ID: ISSN 0160-8371; TRN: IM9905%%26
Resource Type:
Conference
Resource Relation:
Conference: 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997; Other Information: PBD: 1997; Related Information: Is Part Of Conference record of the twenty sixth IEEE photovoltaic specialists conference -- 1997; PB: 1477 p.
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; ZINC OXIDES; ALUMINIUM; ELECTRIC CONTACTS; REFLECTIVE COATINGS; PERFORMANCE; CURRENT DENSITY; FILL FACTORS; ELECTRIC POTENTIAL; QUANTUM EFFICIENCY

Citation Formats

Rech, B., Wieder, S., Beneking, C., Loeffl, A., Kluth, O., Reetz, W., and Wagner, H. Texture etched ZnO:Al films as front contact and back reflector in amorphous silicon p-i-n and n-i-p solar cells. United States: N. p., 1997. Web.
Rech, B., Wieder, S., Beneking, C., Loeffl, A., Kluth, O., Reetz, W., & Wagner, H. Texture etched ZnO:Al films as front contact and back reflector in amorphous silicon p-i-n and n-i-p solar cells. United States.
Rech, B., Wieder, S., Beneking, C., Loeffl, A., Kluth, O., Reetz, W., and Wagner, H. 1997. "Texture etched ZnO:Al films as front contact and back reflector in amorphous silicon p-i-n and n-i-p solar cells". United States. doi:.
@article{osti_304334,
title = {Texture etched ZnO:Al films as front contact and back reflector in amorphous silicon p-i-n and n-i-p solar cells},
author = {Rech, B. and Wieder, S. and Beneking, C. and Loeffl, A. and Kluth, O. and Reetz, W. and Wagner, H.},
abstractNote = {This paper treats the use of texture etched ZnO:Al films in amorphous silicon solar cells. Chemically textured ZnO:Al films were implemented as a front TCO in p-i-n (superstrate) and n-i-p (substrate) solar cells, and in combination with Ag as a textured back reflector in n-i-p (substrate) solar cells. These cells exhibit excellent optical and light-trapping properties demonstrated by high short-circuit current densities. Adapted microcrystalline p-layers solve the ZnO/p-contact problem and thereby provide high fill factors and open-circuit voltages. The initial efficiencies so far obtained are close to 10% for p-i-n and 8% for n-i-p solar cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 1997,
month =
}

Conference:
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