Mechanisms of heavy-ion induced gate rupture in thin oxides
Conference
·
OSTI ID:304162
- Sandia National Labs., Albuquerque, NM (United States)
- Lucent Technologies, Murray Hill, NJ (United States). Bell Labs.
Single event gate rupture (SEGR) is a catastrophic failure mode that occurs in dielectric materials that are struck by energetic heavy ions while biased under a high electric field condition. SEGR can reduce the critical electric field to breakdown to less than half the value observed in normal voltage ramp reliability tests. As electric fields in gate oxides increase to greater than 5 MV/cm in advanced MOS technologies, the impact of SEGR on the reliability of space based electronics must be assessed. In this summary, the authors explore the nature of SEGR in oxides with thickness from 7 nm to less than 5 nm, where soft breakdown is often observed during traditional reliability tests. They discuss the possible connection between the present understanding of SEGR and voltage stress breakdown models.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Financial Management and Controller, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 304162
- Report Number(s):
- SAND--98-1899C; CONF-981206--; ON: DE98006158
- Country of Publication:
- United States
- Language:
- English
Similar Records
Single event gate rupture in thin gate oxides
Precursor ion damage and single event gate rupture in thin oxides
Precursor ion damage and angular dependence of single event gate rupture in thin oxides
Technical Report
·
Sun Jun 01 00:00:00 EDT 1997
·
OSTI ID:491556
Precursor ion damage and single event gate rupture in thin oxides
Conference
·
Sat Jan 31 23:00:00 EST 1998
·
OSTI ID:650374
Precursor ion damage and angular dependence of single event gate rupture in thin oxides
Journal Article
·
Mon Nov 30 23:00:00 EST 1998
· IEEE Transactions on Nuclear Science
·
OSTI ID:323927