Wavelength and pulse duration effects in laser scribing of thin films
Conference
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OSTI ID:302538
- Univ. of Toledo, OH (United States). Dept. of Physics and Astronomy
The authors have studied the performance of six different types of laser systems for scribing of the polycrystalline thin-film PV materials: ZnO, SnO{sub 2}, CdTe, CIGS, Mo, and Si. The laser systems were KrF and XeCl excimer, copper vapor, quasi-cw Nd:YAG (both Q-switched and mode-locked), and flashlamp-pumped Nd:YAG. The wavelengths were 248, 308, 511 and 578, 532, and 1064 nm. Pulses included a 250 ns long train of 0.1 ns pulses (mode-locked) and single pulses from 8 ns and 250 ns. The excimer lasers (KrF and XeCl) were found to give high quality scribes for all materials, including the transparent oxides, ZnO:Al and SnO{sub 2}:F; however, vaporization rates were relatively low. Longer pulse durations (e.g., 90 ns) yielded higher rates of removal (up to 4 {micro}m per J/cm{sup 2}) for some materials. The high pulse energy available from the KrF laser allowed evaluation of beam delivery to a long narrow line which could eliminate the need for beam scanning and provide other advantages for scribing. The authors find that glass-side scribing, as opposed to film-side scribing, works well for Mo and CdTe films.
- Sponsoring Organization:
- National Renewable Energy Lab., Golden, CO (United States)
- OSTI ID:
- 302538
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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