MOVPE of CuGaSe{sub 2} for photovoltaic applications
- Hahn-Meitner-Inst., Berlin (Germany)
- Science Univ. of Tokyo, Noda, Chiba (Japan). Faculty of Science and Technology
For the development of a CuGaSe{sub 2}-based solar cell CuGaSe{sub 2} epitaxial layers were grown on GaAs(001) substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE) exclusively with metalorganic precursors. X-ray diffraction (XRD) measurements revealed predominantly c[001]-oriented growth. The mean surface roughness was determined to be less than 6nm by atomic force microscopy (AFM). Low-temperature photoluminescence (PL) at 10K was dominated by a defect-correlated emission at 1.627eV. Moreover, it was possible to observe near band-edge emission. All CuGaSe{sub 2} layers showed p-type conductivity with net carrier concentrations in the order of 10{sup 17} cm{sup {minus}3} and Hall-mobilities of approximately 30 cm{sup 2}/Vs.
- OSTI ID:
- 302513
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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