Ultrafast carrier dynamics in multiple quantum well p–i–n photodiodes

Zhao, Yifan; Jarrahi, Mona

doi:10.1063/5.0300397

Ultrafast carrier dynamics in multiple quantum well p–i–n photodiodes

Journal Article · Fri Jan 02 00:00:00 EST 2026 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0300397· OSTI ID:3023978

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University of California, Los Angeles, CA (United States)

Quantum well (QW) structures are widely used in lasers, semiconductor optical amplifiers, and modulators, enabling their monolithic integration on the same substrate. As optoelectronic systems evolve to meet the growing bandwidth demands in the terahertz regime, a deep understanding of ultrafast carrier dynamics in QW structures becomes essential. We introduce a comprehensive model to analyze the ultrafast dynamics of interband photo-excited carriers in QW p–i–n structures and to calculate their frequency response. This model characterizes the entire photocarrier transport process, including carrier escape from QWs and movement across heterojunction interfaces. Additionally, we outline theoretical methods for calculating carrier escape times from both QWs and heterojunction interfaces. Using a GaAs/AlGaAs QW p–i–n structure as a case study, we discuss the effects of carrier escape times from QWs and heterojunction interfaces, as well as carrier transit time through the intrinsic region, on the frequency response of QW p–i–n structures.

View Accepted Manuscript (DOE)

Research Organization:: University of California, Los Angeles, CA (United States)

Sponsoring Organization:: Office of Naval Research; USDOE

Grant/Contract Number:: SC0016925

Other Award/Contract Number:: N000142212531

OSTI ID:: 3023978

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 139; ISSN 0021-8979; ISSN 1089-7550

Publisher:: AIP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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