Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors

Lu, Ping-Keng; Fernandez Olvera, Anuar de Jesus; Turan, Deniz; Seifert, Tom Sebastian; Yardimci, Nezih Tolga; Kampfrath, Tobias; Preu, Sascha; Jarrahi, Mona

doi:10.1515/nanoph-2021-0785

Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors

Journal Article · Thu Jan 13 23:00:00 EST 2022 · Nanophotonics (Online)

DOI:https://doi.org/10.1515/nanoph-2021-0785· OSTI ID:1969769

^[1]; ^[2]; Turan, Deniz ^[1]; Seifert, Tom Sebastian ^[3]; Yardimci, Nezih Tolga ^[1]; Kampfrath, Tobias ^[4]; ^[2]; ^[1]

Electrical and Computer Engineering Department , University of California , Los Angeles , CA , USA
Department of Electrical Engineering and Information Technology , Technical University Darmstadt , Darmstadt , Germany
Department of Physics , Freie Universität Berlin , 14195 Berlin , Germany
Department of Physics , Freie Universität Berlin , 14195 Berlin , Germany, Department of Physical Chemistry , Fritz Haber Institute of the Max Planck Society , 14195 Berlin , Germany

Abstract

Efficient terahertz generation and detection are a key prerequisite for high performance terahertz systems. Major advancements in realizing efficient terahertz emitters and detectors were enabled through photonics-driven semiconductor devices, thanks to the extremely wide bandwidth available at optical frequencies. Through the efficient generation and ultrafast transport of charge carriers within a photo-absorbing semiconductor material, terahertz frequency components are created from the mixing products of the optical frequency components that drive the terahertz device – a process usually referred to as photomixing. The created terahertz frequency components, which are in the physical form of oscillating carrier concentrations, can feed a terahertz antenna and get radiated in case of a terahertz emitter, or mix with an incoming terahertz wave to down-convert to DC or to a low frequency photocurrent in case of a terahertz detector. Realizing terahertz photoconductors typically relies on short-carrier-lifetime semiconductors as the photo-absorbing material, where photocarriers are quickly trapped within one picosecond or less after generation, leading to ultrafast carrier dynamics that facilitates high-frequency device operation. However, while enabling broadband operation, a sub-picosecond lifetime of the photocarriers results in a substantial loss of photoconductive gain and optical responsivity. In addition, growth of short-carrier-lifetime semiconductors in many cases relies on the use of rare elements and non-standard processes with limited accessibility. Therefore, there is a strong motivation to explore and develop alternative techniques for realizing terahertz photomixers that do not rely on these defect-introduced short-carrier-lifetime semiconductors. This review will provide an overview of several promising approaches to realize terahertz emitters and detectors without short-carrier-lifetime semiconductors. These novel approaches utilize p-i-n diode junctions, plasmonic nanostructures, ultrafast spintronics, and low-dimensional materials to offer ultrafast carrier response. These innovative directions have great potentials for extending the applicability and accessibility of the terahertz spectrum for a wide range of applications.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0016925

OSTI ID:: 1969769

Alternate ID(s):: OSTI ID: 2001455
OSTI ID: 1980998

Journal Information:: Nanophotonics (Online), Journal Name: Nanophotonics (Online) Journal Issue: 11 Vol. 11; ISSN 2192-8614

Publisher:: Walter de Gruyter GmbHCopyright Statement

Country of Publication:: Germany

Language:: English

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