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Optimization of InGaN quantum well interfaces for fast interwell carrier transport and low nonradiative recombination

Journal Article · · Gallium Nitride Materials and Devices XVII, SPIE
DOI:https://doi.org/10.1117/12.2608695· OSTI ID:3023005
 [1];  [2];  [2];  [2];  [2];  [1]
  1. KTH Royal Institute of Technology, Stockholm (Sweden)
  2. University of California, Santa Barbara, CA (United States)
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Efficient high-power operation of light emitting diodes based on InGaN quantum wells (QWs) requires rapid interwell hole transport and low nonradiative recombination. The transport rate can be increased by replacing GaN barriers with that of InGaN. Introduction of InGaN barriers, however, increases the rate of the nonradiative recombination. In this work, we have attempted to reduce the negative impact of the nonradiative recombination by introducing thin GaN or AlGaN interlayers at the QW/barrier interfaces. The interlayers, indeed, reduce the nonradiative recombination rate and increase the internal quantum efficiency by about 10%. Here, the interlayers do not substantially slow down the interwell hole transport; for 0.5 nm Al0.10Ga0.90N interlayers the transport rate has even been found to increase. Another positive feature of the interlayers is narrowing of the QW PL linewidth, which is attributed to smoother QW interfaces and reduced fluctuations of the QW width.
Research Organization:
KTH Royal Institute of Technology, Stockholm (Sweden); University of California, Santa Barbara, CA (United States)
Sponsoring Organization:
National Science Foundation (NSF) RAISE program; Simons Foundation; Swedish Energy Agency; USDOE
Grant/Contract Number:
EE0009691
Other Award/Contract Number:
45390-1
601952
DMS-1839077
OSTI ID:
3023005
Journal Information:
Gallium Nitride Materials and Devices XVII, SPIE, Journal Name: Gallium Nitride Materials and Devices XVII, SPIE
Publisher:
SPIECopyright Statement
Country of Publication:
United States
Language:
English

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Related Subjects

InGaN
LED
carrier transport
nonradiative recombination
quantum wells