Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination

Yapparov, Rinat; Lynsky, Cheyenne; Nakamura, Shuji; Speck, James S.; Marcinkevičius, Saulius

doi:10.35848/1882-0786/abc856

Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination

Journal Article · Fri Nov 20 00:00:00 EST 2020 · Applied Physics Express

DOI:https://doi.org/10.35848/1882-0786/abc856· OSTI ID:1740011

^[1]; ^[2]; Nakamura, Shuji ^[2]; Speck, James S. ^[2]; Marcinkevičius, Saulius ^[3]

AlbaNova Univ. Center, Stockholm (Sweden); University of California, Santa Barbara, Materials Department
Univ. of California, Santa Barbara, CA (United States)
AlbaNova Univ. Center, Stockholm (Sweden)

Rapid interwell carrier transport is a key process for a uniform carrier distribution and reduced Auger recombination in multiple quantum well (MQW) light emitting devices. In this work, the interwell transport has been studied by time-resolved photoluminescence in In_0.12Ga_0.88N MQWs with In_xGa_1–xN (x = 0 - 0.06) and Al_0.065Ga_0.935N barriers. Only for the InGaN barriers the transport is efficient. Furthermore, introduction of In into the barriers is accompanied by an increase of the nonradiative recombination at QW interfaces. Still, even with the increased Shockley–Read–Hall recombination, structures with InGaN barriers might be advantageous for high power devices because of the reduced Auger recombination.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: Swedish Energy Agency; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office

Grant/Contract Number:: EE0008204

OSTI ID:: 1740011

Alternate ID(s):: OSTI ID: 23067802

Journal Information:: Applied Physics Express, Journal Name: Applied Physics Express Journal Issue: 12 Vol. 13; ISSN 1882-0778

Publisher:: Japan Society of Applied PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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