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Ferroelectric Switching in Hybrid Molecular-Beam-Epitaxy-Grown BaTiO3 Films

Journal Article · · Nano Letters
Molecular beam epitaxy (MBE) is a promising synthesis technique for both heterostructure growth and epitaxial integration of ferroelectric BaTiO3. However, direct measurement of the remnant polarization (Pr) has not been previously reported in MBE-grown BaTiO3 films. We report the in situ growth of an all-epitaxial SrRuO3/BaTiO3/SrRuO3 heterostructure on Nb-doped SrTiO3 (001) substrates by hybrid MBE using metal–organic precursors. This capacitor structure consisting of 16 nm SrRuO3/40 nm BaTiO3/16 nm SrRuO3 shows hysteretic polarization–electric field (P–E) curves with Pr ∼ 15 μC cm–2 at frequencies ranging from 500 Hz to 20 kHz, after isolating the intrinsic ferroelectric response from non-ferroelectric contributions using the Positive-Up-Negative-Down (PUND) method. We hypothesize that the asymmetry in switching behavior and current leakage has origins in structural defects. Furthermore, this work opens the door to defect-engineered ferroelectric BaTiO3-based heterostructures grown by hybrid MBE for future electronic, photonic and spintronic applications.
Research Organization:
University of Minnesota, Minneapolis, MN (United States)
Sponsoring Organization:
Air Force Office of Scientific Research (AFOSR); Materials Research Science and Engineering Center (MRSEC); National Nanotechnology Coordinated Infrastructure (NNCI); USDOE; Vannevar Bush Faculty Fellowship
Grant/Contract Number:
SC0020211
Other Award/Contract Number:
FA9550-18-1-0294
FA9550-23-1-0085
FA9550-23-1-0093
N00014-19-1-2623
DMR-2011401
FA9550-25-1-0262
FA9550-23-1-0247
ECCS-2025124
OSTI ID:
3022078
Journal Information:
Nano Letters, Journal Name: Nano Letters Journal Issue: 39 Vol. 25; ISSN 1530-6992; ISSN 1530-6984
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

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