Geometry-driven modeling of electron localization in InAs/GaAs double quantum dots

Filikhin, Igor; Vlahovic, Branislav; Zatezalo, Tanja; Flanigan, Patrick; Oxley, Jimmie

doi:10.20935/AcadQuant7862

Geometry-driven modeling of electron localization in InAs/GaAs double quantum dots

Journal Article · Fri Aug 22 00:00:00 EDT 2025 · Academia quantum

DOI:https://doi.org/10.20935/AcadQuant7862· OSTI ID:3015218

Filikhin, Igor ^[1]; Vlahovic, Branislav ^[1]; Zatezalo, Tanja ^[1]; Flanigan, Patrick ^[1]; Oxley, Jimmie ^[2]

North Carolina Central University, Durham, NC (United States)
University of Rhode Island, Kingston, RI (United States)

The coupled electronic states in two-dimensional (2D) and three-dimensional (3D) double quantum dot (DQD) systems are investigated using a phenomenological model applied to InAs/GaAs heterostructures. The single-band k • p effective potential approach previously proposed by our group is employed to numerically calculate the energy spectrum and spatial localization of a single electron, serving as an indicator of the coupling strength within the binary system. For identical quantum dots (QDs) in a DQD, the electronic states exhibit ideal coherence. We systematically vary the DQD geometry and the strength of the confinement potential (via an applied electric field) to examine the effects of symmetry breaking and the sensitivity of electron localization in both identical and nearly identical DQDs. Our results show that coherence in DQDs is highly sensitive to these subtle variations. This sensitivity can be harnessed to detect changes in the surrounding environment, such as fluctuations in chemical or electrical properties that affect the DQD system.

View Accepted Manuscript (DOE)

Research Organization:: North Carolina Central University, Durham, NC (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003979; SC0014664

OSTI ID:: 3015218

Journal Information:: Academia quantum, Journal Name: Academia quantum Journal Issue: 3 Vol. 2; ISSN 3064-979X

Publisher:: Academia.edu JournalsCopyright Statement

Country of Publication:: United States

Language:: English

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