Silicon wafer fracture stress for tracking sensors in particle physics experiments

Abidi, Haider; Fadeyev, Vitaliy; Jones, Tim; Kumar, Akhil; Lee, Tom; Poley, Luise; Sawyer, Craig; Vallone, Giorgio; Wonsak, Sven

doi:10.1088/1748-0221/20/10/p10020

Silicon wafer fracture stress for tracking sensors in particle physics experiments

Journal Article · Thu Oct 09 00:00:00 EDT 2025 · Journal of Instrumentation

DOI:https://doi.org/10.1088/1748-0221/20/10/p10020· OSTI ID:3015182

Abidi, Haider ^[1]; Fadeyev, Vitaliy ^[2]; Jones, Tim ^[3]; Kumar, Akhil ^[4]; Lee, Tom ^[3]; ^[5]; Sawyer, Craig ^[6]; Vallone, Giorgio ^[7]; Wonsak, Sven ^[8]

Brookhaven National Laboratory (BNL), Upton, NY (United States)
Univ. of California, Santa Cruz, CA (United States)
Univ. of Liverpool (United Kingdom)
Univ. of Cambridge (United Kingdom); Univ. of Liverpool (United Kingdom)
TRIUMF, Vancouver, BC (Canada); Simon Fraser Univ., Burnaby, BC (Canada)
Science and Technology Facilities Council (STFC), Oxford (United Kingdom). Rutherford Appleton Laboratory (RAL)
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
TRIUMF, Vancouver, BC (Canada)

For the construction of the ATLAS Inner Tracker strip detector, silicon strip sensor modules are glued directly onto carbon fibre support structures using a soft silicone gel. During tests at temperatures below -35°C, several of the sensors were found to crack due to a mismatch in coefficients of thermal expansion between polyimide circuit boards with copper metal layers (glued onto the sensor) and the silicon sensor itself. While module assembly procedures were developed to minimise variations between modules, cold tests showed a wide range of temperatures at which supposedly comparable modules failed. The observed variance (fracture temperatures between -35°C and -70°C) for supposedly comparable modules suggests an undetected variation between modules suspected to be intrinsic to the silicon wafer itself. Therefore, a test programme was developed to investigate the fracture stress of representative sensor wafer cutoffs. This paper presents results for the fracture stress of silicon sensors used in detector modules.

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), High Energy Physics (HEP)

Grant/Contract Number:: AC02-05CH11231; SC0010107

OSTI ID:: 3015182

Journal Information:: Journal of Instrumentation, Journal Name: Journal of Instrumentation Journal Issue: 10 Vol. 20; ISSN 1748-0221

Publisher:: Institute of Physics (IOP)Copyright Statement

Country of Publication:: United States

Language:: English

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