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Broad-Range Tuning of Ferroelectric Switching of LaxBi1-xFeO3 Epitaxial Films via Digital Doping using Off-Axis Co-Sputtering

Journal Article · · APL Materials
DOI:https://doi.org/10.1063/5.0293819· OSTI ID:3013625
To investigate the scope of ferroelectric behavior in La-substituted BiFeO3 films, LaxBi1-xFeO3 epitaxial films were synthesized using off-axis co-sputtering on SrTiO3(001) and DyScO3(110) substrates with a SrRuO3 bottom electrode layer. A digital-doping deposition method was used to enable precise control and continuous tuning of La concentration in high-quality LaxBi1-xFeO3 films across a wide range of x = 0.05-0.60, which was systematically investigated using piezoresponse force microscopy. Robust and reversible out-of-plane ferroelectric switching has been observed up to x = 0.35, while films with x ≥ 0.37 exhibit no measurable ferroelectric behavior, indicating a sharp ferroelectric-to-paraelectric phase transition between x = 0.35 and 0.37. This represents the highest reported La concentration in LaxBi1-xFeO3 films that retains ferroelectric ordering, highlighting opportunities to engineer ferroelectric and multiferroic properties in complex oxide heterostructures.
Research Organization:
The Ohio State University; Intel Foundry Technology Research
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); Intel Center of Ferro-Electrics for Energy Efficiency (COFEEE); National Science Foundation
Grant/Contract Number:
SC0001304
OSTI ID:
3013625
Journal Information:
APL Materials, Journal Name: APL Materials
Publisher:
AIP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

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