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Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Journal Article · · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
4H-SiC Low Gain Avalanche Detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO2 passivation layer. The I–V and C–V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with alpha particles from a $$^{210}_{84}$$Po source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.
Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); North Carolina State University, Raleigh, NC (United States)
Sponsoring Organization:
National Science Foundation (NSF); US Department of Energy; USDOE Office of Science (SC), High Energy Physics (HEP); USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Grant/Contract Number:
AC02-05CH11231; SC0024252
OSTI ID:
3011020
Alternate ID(s):
OSTI ID: 2588534
OSTI ID: 3008161
Report Number(s):
BNL--228892-2025-JAAM
Journal Information:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Journal Name: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 1082; ISSN 0168-9002
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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