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Fabrication of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Journal Article · · Key Engineering Materials
DOI:https://doi.org/10.4028/p-0t5ifB· OSTI ID:3011014
 [1];  [1];  [2];  [1];  [1];  [2];  [3];  [2];  [1];  [1]
  1. North Carolina State University, Raleigh, NC (United States)
  2. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
  3. Brookhaven National Laboratory (BNL), Upton, NY (United States)
+ Show Author Affiliations
Low gain avalanche detectors (LGADs) offer high temporal resolution for high energy particle detection, which is critical for next generation experiments in hadron colliders. While silicon LGADs (Si-LGADs) have rapidly matured in the last decade, research into silicon carbide (SiC) LGADs has only recently begun. By accounting for fundamental differences in material properties and fabrication processes, we present a prototype device design and process flow for 4H-SiC LGADs with etch-based isolation. Critical steps of the process flow and their results are discussed, including plasma etching, passivation, and the formation of low resistivity contacts. Electrical characterization (I-V, C-V) shows sufficient depletion of the device structure to demonstrate low-gain charge carrier multiplication.
Research Organization:
North Carolina State University, Raleigh, NC (United States)
Sponsoring Organization:
USDOE Office of Science (SC), High Energy Physics (HEP)
Grant/Contract Number:
SC0024252
OSTI ID:
3011014
Journal Information:
Key Engineering Materials, Journal Name: Key Engineering Materials Vol. 1024; ISSN 1662-9795
Publisher:
Trans Tech Publications, Ltd.Copyright Statement
Country of Publication:
United States
Language:
English

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Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)
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  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 1082 https://doi.org/10.1016/j.nima.2025.170873
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A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide journal December 2021
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Similar Records

Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)
Journal Article · Sun Aug 10 20:00:00 EDT 2025 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment · OSTI ID:3011020

Related Subjects

High Energy Physics
LGAD
Particle Detection
PiN Diode
Radiation