Impact of Annealing on the Chemical and Superconducting Properties of Ta Thin Films

Conference · Thu Dec 04 04:00:00 EST 2025 · No journal information

DOI:https://doi.org/10.2172/3008668· OSTI ID:3008668

Shinde, Maithilee ^[1]; Sung, Zuhawn ^[2]; Crisa, Francesco ^[2]; Garattoni, Sabrina ^[2]; Zasadzinski, John F. ^[1]; Murthy, Akshay Arun ^[2]

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1. IIT, Chicago
2. Fermilab

Tantalum thin films are annealed to dissolve the surface oxide. The effect of annealing is studied using material characterization tools, XPS and TOF-SIMS, and electrical transport measurements of the annealed films are taken using standard PPMS methods to correlate with the surface chemistry. Annealing dissociates the surface oxide, and the oxygen produced diffuses into the thin film. The introduction of oxygen reduces the quality of the thin film, as shown by the suppression of Tc and a reduction in RRR.

• Research Organization: Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States); IIT, Chicago
• Sponsoring Organization: US Department of Energy
• DOE Contract Number: 89243024CSC000002
• OSTI ID: 3008668
• Report Number(s): FERMILAB-POSTER-25-0273-SQMS; oai:inspirehep.net:3093115
• Resource Type: Conference poster
• Conference Information: Journal Name: No journal information
• Country of Publication: United States
• Language: English