Plasmonic Diamond Membranes for Ultrafast Silicon Vacancy Emission

Boyce, Andrew M.; Li, Hengming; Wilson, Nathaniel C.; Acil, Deniz; Shams-Ansari, Amirhassan; Chakravarthi, Srivatsa; Pederson, Christian; Shen, Qixin; Yama, Nicholas; Fu, Kai-Mei C.; Loncar, Marko; Mikkelsen, Maiken H.

doi:10.1021/acs.nanolett.3c04002

Plasmonic Diamond Membranes for Ultrafast Silicon Vacancy Emission

Journal Article · Wed Mar 13 00:00:00 EDT 2024 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.3c04002· OSTI ID:3007175

Boyce, Andrew M. ^[1]; Li, Hengming ^[1]; Wilson, Nathaniel C. ^[1]; Acil, Deniz ^[1]; Shams-Ansari, Amirhassan ^[2]; Chakravarthi, Srivatsa ^[3]; Pederson, Christian ^[3]; Shen, Qixin ^[1]; ^[3]; Fu, Kai-Mei C. ^[3]; Loncar, Marko ^[2]; ^[1]

Duke Univ., Durham, NC (United States)
Harvard Univ., Cambridge, MA (United States)
Univ. of Washington, Seattle, WA (United States)

Silicon vacancy centers (SiVs) in diamond have emerged as a promising platform for quantum sciences due to their excellent photostability, minimal spectral diffusion, and substantial zero-phonon line emission. However, enhancing their slow nanosecond excited-state lifetime by coupling to optical cavities remains an outstanding challenge, as current demonstrations are limited to ~10-fold. Here, we couple negatively charged SiVs to sub-diffraction-limited plasmonic cavities and achieve an instrument-limited ≤8 ps lifetime, corresponding to a 135-fold spontaneous emission rate enhancement and a 19-fold photoluminescence enhancement. Nanoparticles are printed on ultrathin diamond membranes on gold films which create arrays of plasmonic nanogap cavities with ultrasmall volumes. SiVs implanted at 5 and 10 nm depths are examined to elucidate surface effects on their lifetime and brightness. The interplay between cavity, implantation depth, and ultrathin diamond membranes provides insights into generating ultrafast, bright SiV emission for next-generation diamond devices.

View Accepted Manuscript (DOE)

Research Organization:: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)

Sponsoring Organization:: National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); USDOE

Grant/Contract Number:: AC05-76RL01830

OSTI ID:: 3007175

Report Number(s):: PNNL-SA--217101

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 12 Vol. 24; ISSN 1530-6992; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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