Transmission electron microscopy and photoluminescence studies of Er implanted low-temperature grown GaAs:Be
- Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
- Instituto de Fisica, UFRGS, Porto Alegre, RS, (Brazil) 91501-970
- Naval Research Laboratory, Washington, DC 20375-5347 (United States)
- University of California, Department of Material Science, Berkeley, California 94720 (United States)
Characteristic 1.54 {mu}m 4f-4f emission has been observed from Er{sup 3+} centers in Er-implanted and annealed, low-temperature grown GaAs:Be samples, while cross-sectional transmission electron microscopy (TEM) studies reveal very little structural damage for elevated temperature implants. No Er emission was observed from any of the as-implanted samples, while the Er emission intensity was significantly more intense after 650thinsp{degree}C anneals than after 750thinsp{degree}C anneals. Significant enhancement of the optically active Er incorporation was achieved when the implantation was carried out at 300thinsp{degree}C. For the two total Er fluences employed (5.5{times}10{sup 13} and 13.6{times}10{sup 13}thinspEr/cm{sup 2}) the Er emission intensity exhibited a linear dependence upon implantation fluence, while TEM indicated no significant increase in the damage level at the higher fluence 300thinsp{degree}C implant. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 298597
- Journal Information:
- Applied Physics Letters, Vol. 73, Issue 15; Other Information: PBD: Oct 1998
- Country of Publication:
- United States
- Language:
- English
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