3d-Metal Doped into LiMn2O4 Thin Films
3d-metal (Me) doped LiMn{sub 2}O{sub 4} thin films were deposited by rf magnetron sputtering of Li[Mn{sub 1.9}Me{sub 0.1}]O{sub 4} targets in Ar + N{sub 2} and Ar + O{sub 2} gas mixtures and annealed at 750{degrees}C in O{sub 2} for 1 h. From XRD measurements, the structure of the Me-doped thin film was dependent upon the element and the deposition conditions. The doping level of Me/Mn of cubic phase was less than 0.1 by EDX measurements. The Ti-LiMn{sub 2}O{sub 4} films exhibited a capacity close to theoretical for stoichiometric LiMn{sub 2}O{sub 4}. This improvement at 4 V comes at the expense of the capacity at 5 V. Cells with Ti-doped films exhibited the same low capacity fade as those with undoped LiMn{sub 2}O{sub 4} cathodes. Similar electrochemical changes were observed with the Cr- and Zn-LiMn{sub 2}O{sub 4} films. The discharge capacities above 4.5 V for the Ni-doped films were about equal to those below 4.5 V, and the thin-film cells could be cycled reversibility between 3.5 and 5.3 V.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Oak Ridge, TN
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 2977
- Report Number(s):
- ORNL/CP-100702; KC 02 02 02 0; ON: DE00002977
- Resource Relation:
- Conference: Electrochemical Society Meeting, Boston, MA, Nov. 1-6, 1998
- Country of Publication:
- United States
- Language:
- English
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