Improvement of luminescent properties of thin-film phosphors by excimer laser processing

Technical Report · Thu Dec 31 04:00:00 EST 1998

DOI:https://doi.org/10.2172/296757· OSTI ID:296757

McKittrick, J; Bacalski, C F; Hirata, G A ^[1]; Sze, R C; Mourant, J; Salazar, K V; Trkula, M ^[2]

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1. Univ. of California, San Diego, La Jolla, CA (United States)
2. Los Alamos National Lab., NM (United States)

Thin-films of europium doped yttrium oxide, (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3}, were deposited on sapphire substrates by metallorganic chemical vapor deposition. The films, {approximately} 400 nm thick, were weakly luminescent in the as-deposited condition. A KrF laser was pulsed once on the surface of the films at a fluence level between 0.9--2.3 J/cm{sup 2}. One pulse was sufficient to melt the film, which increased the photoluminescent emission intensity. Melting of a rough surface resulted in smoothing of the surface. The highest energy pulse resulted in a decrease in luminous intensity, presumably due to material removal. Computational modeling of the laser melting and ablation process predicted that a significant fraction of the film is removed by ablation at the highest fluence levels.

• Research Organization: Los Alamos National Lab., NM (United States)
• Sponsoring Organization: USDOE Assistant Secretary for Human Resources and Administration, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 296757
• Report Number(s): LA-UR--98-1975; CONF-980447--; ON: DE99000698
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
EUROPIUM OXIDES
EXPERIMENTAL DATA
INORGANIC PHOSPHORS
LASER RADIATION
LUMINESCENCE
SURFACE TREATMENTS
YTTRIUM OXIDES