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New CdTe photoconductor array detector for x-ray applications

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.113684· OSTI ID:29246
; ;  [1];  [2];  [3];  [1]
  1. Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607-7059 (United States)
  2. Experimental Facilities Division, Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  3. Department of Physics, Brooklyn College of CUNY, Brooklyn, New York 11210 (United States)

A CdTe photoconductor array x-ray detector was grown using molecular beam epitaxy (MBE) on a Si(100) substrate. The temporal response of the photoconductor arrays is as fast as 21 ps rise time and 38 ps full width half-maximum (FWHM). The spatial resolution of the photoconductor was good enough to provide 75 {mu}m FWHM using a 50 {mu}m synchrotron x-ray beam. A substantial number of x-ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x-ray detectors.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
29246
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 66; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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