New CdTe photoconductor array detector for x-ray applications
- Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607-7059 (United States)
- Experimental Facilities Division, Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
- Department of Physics, Brooklyn College of CUNY, Brooklyn, New York 11210 (United States)
A CdTe photoconductor array x-ray detector was grown using molecular beam epitaxy (MBE) on a Si(100) substrate. The temporal response of the photoconductor arrays is as fast as 21 ps rise time and 38 ps full width half-maximum (FWHM). The spatial resolution of the photoconductor was good enough to provide 75 {mu}m FWHM using a 50 {mu}m synchrotron x-ray beam. A substantial number of x-ray photons are absorbed effectively within the MBE CdTe layer as observed from the linear response up to 15 keV. These results demonstrate that MBE grown CdTe is a suitable choice of the detector materials to meet the requirements for x-ray detectors.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 29246
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 66; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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