Y--Ba--Cu--O multilayer structures with amorphous dielectric layers for multichip modules using ion-assisted pulsed-laser deposition

Journal Article · Mon Apr 10 00:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.114285· OSTI ID:29245

Reade, R P; Berdahl, P; Russo, R E ^[1]; Schaper, L W ^[2]

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1. Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
2. University of Arkansas, Fayetteville, Arkansas 72701 (United States)

Existing technology to construct high-temperature superconductor (HTSC) multichip modules (MCM`s) incorporating several YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) thin films and thick dielectric layers are based on epitaxial growth of all layers from the template of a single-crystal substrate. This work demonstrates an alternate method to fabricate these structures: the use of a biaxially aligned yttria-stabilized zirconia (YSZ) intermediate layer deposited by ion-assisted pulsed-laser deposition. Using this technique, a YBCO thin film with {ital T}{sub {ital c}}{similar_to}87 K and {ital J}{sub {ital c}}{similar_to}3{times}10{sup 5} A/cm{sup 2} was grown on a 5 {mu}m amorphous SiO{sub 2} layer. In addition, YBCO/YSZ/SiO{sub 2}/YSZ/YBCO/CeO{sub 2}/YSZ and YBCO/YSZ/amorphous-YSZ/YBCO/CeO{sub 2}/YBCO multilayer structures were constructed.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 29245
• Journal Information: Applied Physics Letters, Vol. 66, Issue 15; Other Information: PBD: 10 Apr 1995
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
YTTRIUM OXIDES
DEPOSITION
BARIUM OXIDES
COPPER OXIDES
HIGH-TC SUPERCONDUCTORS
LASERS
FABRICATION
FILMS
TRANSITION TEMPERATURE
CRITICAL CURRENT
SUPERCONDUCTING DEVICES