An x-ray spectromicroscopic study of electromigration in patterned Al(Cu) lines

Journal Article · Thu Dec 31 23:00:00 EST 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123120· OSTI ID:289264

Solak, H H; Lorusso, G F; Singh-Gasson, S; Cerrina, F ^[1]

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1. Department of Electrical and Computer Engineering, University of Wisconsin---Madison, Madison, Wisconsin 53706 (United States)

We studied the surface properties of patterned Al(Cu) lines related to the electromigration phenomena using photoemission spectromicroscopy techniques. We stressed the lines for electromigration {ital in situ} in the ultrahigh vacuum microscope chamber and observed the changes on the line surface. Our results show surface precipitation of Cu beneath the Al{sub 2}O{sub 3} layer on the line surface as well as on side walls. Enrichment of grain boundaries in Cu due to electromigration flux was observed in areas downstream of voids with respect to the electron flow. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 289264
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 74; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM
ALUMINIUM ALLOYS
CONNECTORS
COPPER
COPPER ALLOYS
ELECTROPHORESIS
GRAIN BOUNDARIES
INTEGRATED CIRCUITS
MICROSCOPY
MIGRATION
PHOTOEMISSION
PRECIPITATION
THIN FILMS
VOIDS