Metal alkoxide derived oriented and epitaxial ferroelectric thin films
- Fuji Xerox Co., Ltd., Kanagawa (Japan)
Ferroelectric thin films including LiNbO{sub 3}, LiTaO{sub 3}, KNbO{sub 3}, and PZT were prepared by a process utilizing non-hydrolyzed metal methoxy-ethoxide precursors, spin coating, and rapid thermal annealing. Epitaxial and dense LiNbO{sub 3} and LiTaO{sub 3} films without any misoriented planes on sapphire (110) and (001) substrates were obtained with the present process. The LiNbO{sub 3} started to crystallize at 400{degrees}C and the refractive indices of LiNbO{sub 3} annealed over 600{degrees}C were close to those of bulk single crystals. Rocking curve full widths at half maximum (FWHM) for (110) of epitaxial LiNbO{sub 3} and LiTaO{sub 3} films on sapphire (110) less than 0.4{degrees} were observed. Epitaxial or highly oriented KNbO{sub 3} and PZT thin films with rocking curve FWHMs for (100) of 2.5{degrees} and 1.5{degrees}, respectively, were successfully grown on MgO (100) substrates.
- OSTI ID:
- 28828
- Report Number(s):
- CONF-931142--
- Country of Publication:
- United States
- Language:
- English
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