{ital a}-{ital b} Plane Microwave Surface Impedance of a High-Quality Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8} Single Crystal
- IRC in Superconductivity, University of Cambridge, Madingley Road, Cambridge, CB3 0HE (United Kingdom)
- Institute of Materials Science, The University of Tsukuba, 1-1-1, Tenodai, Tsukuba, Ibaraki 305 (Japan)
The {ital a}-{ital b} plane microwave surface impedance of a high-quality Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8} single crystal ({ital T}{sub {ital c}}{approx_equal}93 K) has been measured at 14.4, 24.6, and 34.7 GHz. The surface resistance at low temperature is the lowest yet reported, is comparable with the best YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} data, and has a characteristic {omega}{sup 2} frequency dependence. The change in penetration depth, {Delta}{lambda}{sub {ital ab}}({ital T}), has a strong linear term at low temperature which is consistent with a gap with line nodes on the Fermi surface. The real part of the microwave conductivity displays a broad peak at low temperature, similar to that observed in YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}. {copyright} {ital 1996 The American Physical Society.}
- OSTI ID:
- 286760
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 4 Vol. 77; ISSN 0031-9007; ISSN PRLTAO
- Country of Publication:
- United States
- Language:
- English
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