Liner conformality in ionized magnetron sputter metal deposition processes

Journal Article · Mon Jul 01 04:00:00 EDT 1996 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.588993· OSTI ID:286577

Hamaguchi, S; Rossnagel, S M ^[1]

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1. IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)

The conformality of thin metal films (liners) formed on high-aspect-ratio trench structures in ionized magnetron sputter deposition processes is studied numerically and experimentally. The numerical simulator (SHADE) used to predict the surface topography is based on the shock-tracking method for surface evolution. The simulation results are in good agreement with experimentally observed thin-film topography. It is shown that combination of direct deposition and trench-bottom resputtering results in good conformality of step coverages and the amount of the resputtering needed for the good conformality is almost independent of trench aspect ratios. {copyright} {ital 1996 American Vacuum Society}

• OSTI ID: 286577
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 14; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ALLOYS
ALUMINIUM NITRIDES
CHROMIUM
COMPUTERIZED SIMULATION
COPPER
COPPER ALLOYS
DEPOSITION
HIGH-FREQUENCY DISCHARGES
MORPHOLOGY
SILICON OXIDES
SPUTTERING
TANTALUM
TANTALUM NITRIDES
THIN FILMS
TITANIUM
TITANIUM NITRIDES
TUNGSTEN
TUNGSTEN NITRIDES