Photoexcited carrier dynamics in InAlGaAs/InP quantum well laser structures

Journal Article · Thu Aug 01 00:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.117071· OSTI ID:286527

Marcinkevicius, S ^[1]; Hillmer, H; Loesch, R ^[2]; Olin, U ^[3]

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1. Department of Physics II, Royal Institute of Technology, 10044 Stockholm (Sweden)
2. Deutsche Telekom, Technologiezentrum, P. O. Box 100003, D-64276 Darmstadt (Germany)
3. Institute of Optical Research, 10044 Stockholm (Sweden)

Experimental investigations of carrier transport and capture into quantum wells are performed for InAlGaAs/InP laser structures. Time-resolved photoluminescence measurements are made by upconversion technique. The characteristic times for the ambipolar carrier transport in the confinement region and the electron capture into the quantum wells are about 2{endash}5 and 1 ps, respectively. The obtained results show a good potential for high-speed InAlGaAs/InP quantum well lasers operating in the 1.5 {mu}m spectral region. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 286527
• Journal Information: Applied Physics Letters, Vol. 69, Issue 8; Other Information: PBD: Aug 1996
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SEMICONDUCTOR LASERS
CHARGE CARRIERS
TRANSPORT THEORY
HETEROJUNCTIONS
PHOTOLUMINESCENCE
TIME RESOLUTION
NEAR INFRARED RADIATION
ELECTRON CAPTURE
GALLIUM ARSENIDES
CHARGE TRANSPORT
INDIUM ARSENIDES
ALUMINIUM ARSENIDES
INDIUM PHOSPHIDES
QUANTUM WELLS
PS RANGE