Dielectric properties of TiO{sub 2}{endash}Nb{sub 2}O{sub 5} crystallographic shear structures

Journal Article · Sat Jun 01 04:00:00 EDT 1996 · Journal of Materials Research

DOI:https://doi.org/10.1557/JMR.1996.0179· OSTI ID:285864

Cava, R J; Krajewski, J J; Peck, Jr, W F; Roberts, G L ^[1]

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1. AT&T Bell Laboratories, Murray Hill, New Jersey 07974-3000 (United States)

The dielectric constants ({ital K}) have been measured near ambient temperature for polycrystalline bulk ceramics of the crystallographic shear compounds TiNb{sub 24}O{sub 62}, Ti{sub 2}Nb{sub 10}O{sub 29}, and TiNb{sub 2}O{sub 7}. These show enhanced {ital K}{close_quote}s over Nb{sub 2}O{sub 5} and TiO{sub 2}, with the 2:10:29 phase displaying an ambient temperature {ital K} of approximately 130. We also report the effects of partial substitution of Nb by Ta. In general, the dielectric constants are enhanced for 5{endash}10{percent} Ta substitution, with the detailed behavior differing for the three phases. {copyright} {ital 1996 Materials Research Society.}

• OSTI ID: 285864
• Journal Information: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 6 Vol. 11; ISSN JMREEE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CERAMICS
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
NIOBIUM OXIDES
SUBSTITUTION
TEMPERATURE RANGE 273-400 K
TITANIUM OXIDES