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Improvement of the dielectric properties of Ta{sub 2}O{sub 5} through substitution with Al{sub 2}O{sub 3}

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.119088· OSTI ID:524949
; ; ; ; ; ;  [1]
  1. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
For bulk ceramic materials, small substitutions of Al{sub 2}O{sub 3} in Ta{sub 2}O{sub 5} are shown to cause a moderate enhancement of the dielectric constant. For compositions near 0.95Ta{sub 2}O{sub 5}{endash}0.05Al{sub 2}O{sub 3}, the temperature coefficient of the dielectric constant at 20{degree}C dramatically decreases, from more than 200 ppm/{degree}C for pure Ta{sub 2}O{sub 5} to less than 20 ppm/{degree}C. The quality factors (Q) at 1 MHz, are 2000{endash}5000. Measurements to 14 GHz at 20{degree}C show that the dielectric constant is maintained to microwave frequencies, with a Q of {approximately}600 at 5 GHz. {copyright} {ital 1997 American Institute of Physics.}
OSTI ID:
524949
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 70; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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