High rate and highly selective anisotropic etching for WSi{sub {ital x}}/poly-Si using electron cyclotron resonance plasma
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- LSI Department, Instruments Division, Hitachi Ltd., 751 Horiguchi, Hitachinaka-shi, Ibaraki 312 (Japan)
- Semiconductor and Integrated Circuits Division, Hitachi Ltd., 5-20-1, Josuihon-cho, Kodaira-shi, Tokyo 187 (Japan)
High rate and highly selective anisotropic etching for tungsten polycide (WSi{sub {ital x}}/poly-Si) has been developed by fully utilizing such advantages of the electron cyclotron resonance plasma etcher, as high plasma density and independent control of ion energy and plasma density. Highly anisotropic etching with a WSi{sub {ital x}}/poly-Si etch rate of 400 nm/min and a poly-Si/SiO{sub 2} selectivity of 50 was realized by adding O{sub 2} to Cl{sub 2} and reducing the ion energy. O{sub 2} addition increases the WSi{sub {ital x}} etch rate and reduces the SiO{sub 2} etch rate, keeping the poly-Si etch rate nearly constant. This leads to the same etch rate for WSi{sub {ital x}} and poly-Si, and a higher selectivity for poly-Si/SiO{sub 2}. The decrease in the SiO{sub 2} etch rate was found to be mainly caused by a deposition of SiO{sub {ital x}} on the surface. The role of the O{sub 2} was found to be not only increasing the WSi{sub {ital x}} etch rate and the poly-Si/SiO{sub 2} selectivity but forming a sidewall protection film to achieve an anisotropic etching. {copyright} {ital 1996 American Vacuum Society}
- OSTI ID:
- 285560
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 14; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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