Molecular-beam epitaxy of high quality lattice matched In{sub 1{minus}{ital x}{minus}{ital y}}Ga{sub {ital x}}Al{sub {ital y}}As epitaxial layers on InP substrates
- Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 (Singapore)
The InGaAlAs epilayer is lattice matched to the InP substrate at an InAs mole fraction of 0.53. Experiments were conducted systematically to establish growth parameters for InGaAlAs epilayers with good crystalline and optical quality suitable for laser device applications. Quaternary alloy epilayers of InGaAlAs were grown on InP substrates by the conventional solid source molecular-beam epitaxy technique. The normalized In flux was varied in the range 0.25{endash}0.47 resulting in compressive, matched, and tensile epilayers with respect to the InP substrate. Rocking curves obtained from a double crystal x-ray diffractometer showed the best half-width of 15 arcsec for the epilayer matched to the InP substrate with a mismatch of only 0.03{percent}. Photoluminescence peaks obtained at room and 4 K temperatures indicate half-widths of 70 and 12 meV, respectively. These results are comparable with the best values reported on this material. {copyright} {ital 1996 American Vacuum Society}
- OSTI ID:
- 285559
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 14, Issue 3; Other Information: PBD: May 1996
- Country of Publication:
- United States
- Language:
- English
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