Two-phase liquid phase epitaxy of In{sub 0.53}Ga{sub 0.47}As on InP
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- National Taiwan Univ., Taipei (Taiwan, Province of China)
The growth of the In{sub 0.53}Ga{sub 0.47}As epilayer on InP by two-phase liquid phase epitaxy is investigated. To saturate the In melt before growth, an overweight GaAs wafer is chosen as solid source and put on top of the melt. By adjusting the weight of In, epilayers with a lattice mismatch {Delta}a{sub {perpendicular}}/a below 2 x 10{sup -4} are obtained. It is found that the quantity of InAs source required is more than that used in single-phase growth and the growth rate is smaller in two-phase growth. The result is explained using the phase diagram and the theoretical calculation. The growth rate, lattice-mismatch data, and photoluminescence spectra of the epilayers are also presented. 14 refs., 9 figs., 1 tab.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 161686
- Report Number(s):
- CONF-930115--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
Similar Records
Molecular-beam epitaxy of high quality lattice matched In{sub 1{minus}{ital x}{minus}{ital y}}Ga{sub {ital x}}Al{sub {ital y}}As epitaxial layers on InP substrates
Evidence of interface-induced persistent photoconductivity in InP/In{sub 0.53}Ga{sub 0.47}As/InP double heterostructures grown by molecular-beam epitaxy
Growth of high quality Al{sub 0.48}In{sub 0.52}As/Ga{sub 0.47}In{sub 0.53}As heterostructures using strain relaxed Al{sub {ital x}}Ga{sub {ital y}}In{sub 1{minus}{ital x}{minus}{ital y}}As buffer layers on GaAs
Journal Article
·
Wed May 01 00:00:00 EDT 1996
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
·
OSTI ID:285559
Evidence of interface-induced persistent photoconductivity in InP/In{sub 0.53}Ga{sub 0.47}As/InP double heterostructures grown by molecular-beam epitaxy
Journal Article
·
Mon Jul 18 00:00:00 EDT 2005
· Applied Physics Letters
·
OSTI ID:20702584
Growth of high quality Al{sub 0.48}In{sub 0.52}As/Ga{sub 0.47}In{sub 0.53}As heterostructures using strain relaxed Al{sub {ital x}}Ga{sub {ital y}}In{sub 1{minus}{ital x}{minus}{ital y}}As buffer layers on GaAs
Journal Article
·
Mon Jul 01 00:00:00 EDT 1996
· Applied Physics Letters
·
OSTI ID:285848