Characteristics of degenerately doped silicon for spectral control in thermophotovoltaic systems
- Center for Integrated Electronics and Electronics Manufacturing & Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States)
- Knolls Atomic Power Laboratory, Schenectady, New York 12301-1072 (United States)
Heavily doped Si was investigated for use as spectral control filter in thermal photovoltaic (TPV) system. These filters should reflect radiation at 4 {mu}m and above and transmit radiation at 2 {mu}m and below. Two approaches have been used for introducing impurities into Si to achieve high doping concentration. One was the diffusion technique, using spin-on dopants. The plasma wavelength ({lambda}{sub {ital p}}) of these filters could be adjusted by controlling the diffusion conditions. The minimum plasma wavelength achieved was 4.8 {mu}m. In addition, a significant amount of absorption was observed for the wavelength 2 {mu}m and below. The second approach was doping by ion implantation followed by thermal annealing with a capped layer of doped glass. Implantation with high dosage of B and As followed by high temperature annealing ({approx_gt}1000{degree}C) resulted in a plasma wavelength that could be controlled between 3.5 and 6 {mu}m. The high temperature annealing ({approx_gt}1000{degree}C) that was necessary to activate the dopant atoms and to heal the implantation damage, also caused significant absorption at 2 {mu}m. For phosphorous implanted Si, a moderate temperature (800{endash}900{degree}C) was sufficient to activate most of the phosphorous and to heal the implantation damage. The position of the plasma turn-on wavelength for an implantation dose of 2{times}10{sup 16} cm{sup {minus}2} of P was at 2.9 {mu}m. The absorption at 2 {mu}m was less than 20{percent} and the reflection at 5 {mu}m was about 70{percent}. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 285305
- Report Number(s):
- CONF-9507247-; ISSN 0094-243X; TRN: 9610M0207
- Journal Information:
- AIP Conference Proceedings, Vol. 358, Issue 1; Conference: 2. NREL conference on thermophotovoltaic generation of electricity, Colorado Springs, CO (United States), Jul 1995; Other Information: PBD: Feb 1996
- Country of Publication:
- United States
- Language:
- English
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