Characteristics of indium oxide plasma filters deposited by atmospheric pressure CVD
- Electrical, Computer and Systems Engineering Department and Center for Integrated Electronics & Electronic Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States)
- Lockheed-Martin Inc., Schenectady, New York 12301-1072 (United States)
Thin films of undoped and tin-doped In{sub 2}O{sub 3} have been investigated for use as plasma filters in spectral control applications for thermal photovoltaic cells. These films are required to exhibit high reflectance at wavelengths longer than the plasma wavelength {lambda}{sub {ital p}}, high transmittance at wavelengths shorter than {lambda}{sub {ital p}} and low absorption throughout the spectrum. Both types of films were grown via atmospheric pressure chemical vapor deposition (APCVD) on Si (100) and fused silica substrates using trimethylindium (TMI), tetraethyltin (TET), and oxygen as the precursors. The O{sub 2}/TMI partial pressure ratio and substrate temperature were systematically varied to control the filter characteristics. The plasma wavelength {lambda}{sub {ital p}} was found to be a sensitive function of the O{sub 2} partial pressure and the substrate temperature. Post-growth annealing of the films carried out either in nitrogen or air ambient at elevated temperatures did not have any beneficial effect. Tin-doped In{sub 2}O{sub 3} was grown using tetraethyltin (TET) as the dopant. The material properties and consequently the optical response were found to be strongly dependent on the growth conditions such as O{sub 2} and TET partial pressures. Both undoped and tin-doped In{sub 2}O{sub 3} grown on fused silica exhibited enhanced transmittance due to the close matching of refractive indices of In{sub 2}O{sub 3} and silica. X-ray diffractometer measurements indicated that all these films were polycrystalline and highly textured towards the (111) direction. The best undoped and tin-doped In{sub 2}O{sub 3} films had a {lambda}{sub {ital p}} around 2.7 {mu}m, peak reflectance greater than 75{percent} and residual absorption below 20{percent}. These results indicate the promise of undoped and tin-doped In{sub 2}O{sub 3} as a material for plasma filters. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 285304
- Report Number(s):
- CONF-9507247-; ISSN 0094-243X; TRN: 9610M0206
- Journal Information:
- AIP Conference Proceedings, Vol. 358, Issue 1; Conference: 2. NREL conference on thermophotovoltaic generation of electricity, Colorado Springs, CO (United States), Jul 1995; Other Information: PBD: Feb 1996
- Country of Publication:
- United States
- Language:
- English
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