Precursor selection in hybrid molecular beam epitaxy of alkaline-earth stannates

Prakash, Abhinav; Wang, Tianqi; Choudhary, Rashmi; Haugstad, Greg; Gladfelter, Wayne L.; Jalan, Bharat

doi:10.1116/6.0000590

Precursor selection in hybrid molecular beam epitaxy of alkaline-earth stannates

Journal Article · Mon Nov 02 00:00:00 EST 2020 · Journal of Vacuum Science and Technology A

DOI:https://doi.org/10.1116/6.0000590· OSTI ID:1853511

^[1]; Wang, Tianqi ^[2]; ^[2]; ^[2]; Gladfelter, Wayne L. ^[2]; ^[2]

Univ. of Minnesota, Minneapolis, MN (United States); OSTI
Univ. of Minnesota, Minneapolis, MN (United States)

One of the challenges of oxide molecular beam epitaxy (MBE) is the synthesis of oxides containing metals with high electronegativity (metals that are hard to oxidize). The use of reactive organometallic precursors can potentially address this issue. To investigate the formation of radicals in MBE, we explored three carefully chosen metal-organic precursors of tin for SnO₂ and BaSnO₃ growth: tetramethyltin (TMT), tetraethyltin (TET), and hexamethylditin (HMDT). All three precursors produced single-crystalline, atomically smooth, and epitaxial SnO₂ (101) films on r-Al₂O₃ (101¯2) in the presence of oxygen plasma. The study of growth kinetics revealed reaction-limited and flux-limited regimes except for TET, which also exhibited a decrease in the deposition rate with increasing temperature above ~800 °C. Contrary to these similarities, the performance of these precursors was dramatically different for BaSnO₃ growth. TMT and TET were ineffective in supplying adequate tin, whereas HMDT yielded phase-pure, stoichiometric BaSnO₃ films. Significantly, HMDT resulted in phase-pure and stoichiometric BaSnO₃ films even without the use of an oxygen plasma (i.e., with molecular oxygen alone). Furthermore, these results are discussed using the ability of HMDT to form tin radicals and therefore assisting with Sn → Sn⁴⁺ oxidation reaction. Structural and electronic transport properties of films grown using HMDT with and without oxygen plasma are compared. This study provides guideline for the choice of precursors that will enable the synthesis of metal oxides containing hard-to-oxidize metals using reactive radicals in MBE.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Minnesota, Minneapolis, MN (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: SC0020211

OSTI ID:: 1853511

Alternate ID(s):: OSTI ID: 1698052

Journal Information:: Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A Journal Issue: 6 Vol. 38; ISSN 0734-2101

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

References (32)

Frontiers in the Growth of Complex Oxide Thin Films: Past, Present, and Future of Hybrid MBE Brahlek, Matthew; Gupta, Arnab Sen; Lapano, Jason Advanced Functional Materials, Vol. 28, Issue 9 https://doi.org/10.1002/adfm.201702772	journal	December 2017
Highly Conductive SrVO ₃ as a Bottom Electrode for Functional Perovskite Oxides Moyer, Jarrett A.; Eaton, Craig; Engel-Herbert, Roman Advanced Materials, Vol. 25, Issue 26 https://doi.org/10.1002/adma.201300900	journal	May 2013
Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility Prakash, Abhinav; Jalan, Bharat Advanced Materials Interfaces, Vol. 6, Issue 15 https://doi.org/10.1002/admi.201900479	journal	June 2019
Enthalpies of vaporization of tetramethyltin, tetraethyltin, tetra-n-propyltin, and tetraethyl-lead, and a survey of the Group IV tetramethyl and tetraethyl compounds Abraham, M. H.; Irving, R. J. The Journal of Chemical Thermodynamics, Vol. 12, Issue 6 https://doi.org/10.1016/0021-9614(80)90183-4	journal	June 1980
Preparation of yttrium barium copper oxide superconducting films by metalorganic molecular beam epitaxy Endo, K.; Saya, S.; Misawa, S. Thin Solid Films, Vol. 206, Issue 1-2 https://doi.org/10.1016/0040-6090(91)90409-Q	journal	December 1991
Synthesis of conducting oxides by ML-ALE Drozd, V. E.; Aleskovski, V. B. Applied Surface Science, Vol. 82-83 https://doi.org/10.1016/0169-4332(94)90281-X	journal	December 1994
Epitaxial growth and properties of thin film oxides Chambers, Scott A. Surface Science Reports, Vol. 39, Issue 5-6 https://doi.org/10.1016/S0167-5729(00)00005-4	journal	August 2000
Plasma-assisted molecular beam epitaxy of SnO2 on TiO2 Tsai, M. Y.; White, M. E.; Speck, J. S. Journal of Crystal Growth, Vol. 310, Issue 18 https://doi.org/10.1016/j.jcrysgro.2008.06.062	journal	August 2008
Computational Thermochemistry of Mono- and Dinuclear Tin Alkyls Used in Vapor Deposition Processes Harkins, Robin P.; Cramer, Christopher J.; Gladfelter, Wayne L. The Journal of Physical Chemistry A, Vol. 123, Issue 7 https://doi.org/10.1021/acs.jpca.8b12072	journal	February 2019
Separating Electrons and Donors in BaSnO ₃ via Band Engineering Prakash, Abhinav; Quackenbush, Nicholas F.; Yun, Hwanhui Nano Letters, Vol. 19, Issue 12 https://doi.org/10.1021/acs.nanolett.9b03825	journal	November 2019
Dissociation Dynamics and Thermochemistry of Tin Species, (CH₃)₄Sn and (CH₃)₆Sn₂, by Threshold Photoelectron−Photoion Coincidence Spectroscopy Dávalos, Juan Z.; Herrero, Rebeca; Shuman, Nicholas S. The Journal of Physical Chemistry A, Vol. 115, Issue 4 https://doi.org/10.1021/jp111229d	journal	December 2010
Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1 Prakash, Abhinav; Xu, Peng; Faghaninia, Alireza Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/ncomms15167	journal	May 2017
Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO ₃ films Prakash, Abhinav; Xu, Peng; Wu, Xuewang Journal of Materials Chemistry C, Vol. 5, Issue 23 https://doi.org/10.1039/C7TC00190H	journal	January 2017
In situ deposition of superconducting YBa ₂ Cu ₃ O ₇₋ _x and DyBa ₂ Cu ₃ O ₇₋ _x thin films by organometallic molecular‐beam epitaxy King, L. L. H.; Hsieh, K. Y.; Lichtenwalner, D. J. Applied Physics Letters, Vol. 59, Issue 23 https://doi.org/10.1063/1.105788	journal	December 1991
Investigation of (110) SnO2 growth mechanisms on TiO2 substrates by plasma-assisted molecular beam epitaxy Tsai, M. Y.; White, M. E.; Speck, J. S. Journal of Applied Physics, Vol. 106, Issue 2 https://doi.org/10.1063/1.3176932	journal	July 2009
Molecular beam epitaxy of SrTiO3 with a growth window Jalan, Bharat; Moetakef, Pouya; Stemmer, Susanne Applied Physics Letters, Vol. 95, Issue 3 https://doi.org/10.1063/1.3184767	journal	July 2009
Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO ₃ films Wang, Tianqi; Ganguly, Koustav; Marshall, Patrick Applied Physics Letters, Vol. 103, Issue 21 https://doi.org/10.1063/1.4833248	journal	November 2013
Perspective: Oxide molecular-beam epitaxy rocks! Schlom, Darrell G. APL Materials, Vol. 3, Issue 6 https://doi.org/10.1063/1.4919763	journal	June 2015
High-mobility BaSnO ₃ grown by oxide molecular beam epitaxy Raghavan, Santosh; Schumann, Timo; Kim, Honggyu APL Materials, Vol. 4, Issue 1 https://doi.org/10.1063/1.4939657	journal	January 2016
Adsorption-controlled growth of La-doped BaSnO ₃ by molecular-beam epitaxy Paik, Hanjong; Chen, Zhen; Lochocki, Edward APL Materials, Vol. 5, Issue 11 https://doi.org/10.1063/1.5001839	journal	November 2017
GenX : an extensible X-ray reflectivity refinement program utilizing differential evolution Björck, Matts; Andersson, Gabriella Journal of Applied Crystallography, Vol. 40, Issue 6 https://doi.org/10.1107/S0021889807045086	journal	November 2007
Plasma-assisted molecular beam epitaxy and characterization of SnO2 (101) on r-plane sapphire White, M. E.; Tsai, M. Y.; Wu, F. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 26, Issue 5 https://doi.org/10.1116/1.2966423	journal	September 2008
Growth modes in metal-organic molecular beam epitaxy of TiO2 on r-plane sapphire Jalan, Bharat; Engel-Herbert, Roman; Cagnon, Joël Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 27, Issue 2 https://doi.org/10.1116/1.3065713	journal	March 2009
Analysis of carbon in SrTiO3 grown by hybrid molecular beam epitaxy Jalan, Bharat; Cagnon, Joël; Mates, Thomas E. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 27, Issue 6 https://doi.org/10.1116/1.3253355	journal	November 2009
Atomic layer deposition of tin oxide and zinc tin oxide using tetraethyltin and ozone Warner, Ellis J.; Johnson, Forrest; Campbell, Stephen A. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 2 https://doi.org/10.1116/1.4907562	journal	February 2015
Molecular beam epitaxy growth of SnO2 using a tin chemical precursor Wang, Tianqi; Prakash, Abhinav; Warner, Ellis Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 2 https://doi.org/10.1116/1.4913294	journal	February 2015
Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO ₃ Prakash, Abhinav; Dewey, John; Yun, Hwanhui Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 6 https://doi.org/10.1116/1.4933401	journal	November 2015
Cheap and stable titanium source for use in oxide molecular beam epitaxy systems Theis, C. D.; Schlom, D. G. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 14, Issue 4 https://doi.org/10.1116/1.580185	journal	July 1996
THE REACTIVITY OF METAL–METAL BONDS: I. THE Sn–Sn BOND Clark, H. C.; Cotton, J. D.; Tsai, J. H. Canadian Journal of Chemistry, Vol. 44, Issue 8 https://doi.org/10.1139/v66-133	journal	April 1966
High-Temperature Superconducting Multilayers and Heterostructures Grown by Atomic Layer-By-Layer Molecular Beam Epitaxy Eckstein, J. N.; Bozovic, I. Annual Review of Materials Science, Vol. 25, Issue 1 https://doi.org/10.1146/annurev.ms.25.080195.003335	journal	August 1995
Reactive Pathways in the Chemical Vapor Deposition of Tin Oxide Films by Tetramethyltin Oxidation Borman, C. G.; Gordon, R. G. Journal of The Electrochemical Society, Vol. 136, Issue 12 https://doi.org/10.1149/1.2096556	journal	December 1989
Electron transport in semiconducting SnO₂: Intentional bulk donors and acceptors, the interface, and the surface Bierwagen, Oliver; Nagata, Takahiro; White, Mark E. Journal of Materials Research, Vol. 27, Issue 17 https://doi.org/10.1557/jmr.2012.172	journal	June 2012

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