Strongly localized excitons in gallium nitride

Journal Article · Mon Apr 01 00:00:00 EST 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.116182· OSTI ID:283786

Wetzel, C; Fischer, S; Krueger, J; Haller, E E ^[1]; Molnar, R J; Moustakas, T D ^[2]; Mokhov, E N; Baranov, P G ^[3]

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1. Lawrence Berkeley Laboratory and University of California, Berkeley, California 94720 (United States)
2. Molecular Beam Eptiaxy Laboratory, Department of Electrical, Computer and System Engineering, Boston University, Boston, Massachusetts 02215 (United States)
3. Ioffe Physico-Technical Institute, 194021 St. Petersburg (Russia)

We report on strong excitonic luminescence in wurtzite GaN at 3.309 and 3.365 eV ({ital T}=6 K). These lines lie well below the band gap and are found commonly in layers grown by different techniques and on different substrates. From detailed photoluminescence investigations we find small thermal activation energies and a very weak electron{endash}phonon coupling. The photoluminescence behavior under hydrostatic pressure is indicative of strongly localized defects. These findings are similar to observations of excitons localized at extended defects such as dislocations in II{endash}VI compounds. {copyright} {ital 1995 American Institute of Physics.}

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 283786
• Journal Information: Applied Physics Letters, Vol. 68, Issue 18; Other Information: PBD: Apr 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM NITRIDES
PHOTOLUMINESCENCE
PRESSURE DEPENDENCE
EXCITONS
CRYSTAL DEFECTS
ELECTRON-PHONON COUPLING
ACTIVATION ENERGY
BOUND STATE
LOCALIZED STATES
DEFECT STATES