Plasma source ion implantation of ammonia into electroplated chromium
- Los Alamos National Lab., NM (United States)
Ammonia gas (NH{sub 3}) has been used as a nitrogen source for plasma source ion implantation processing of electroplated chromium. No evidence was found of increased hydrogen concentrations in the bulk material, implying that ammonia can be used without risking hydrogen embrittlement. The retained nitrogen dose of 2.1 {times} 10{sup 17} N-at/cm{sup 2} is sufficient to increase the surface hardness of electroplated Cr by 24% and decrease the wear rate by a factor of 4.
- Research Organization:
- Los Alamos National Lab., NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 28338
- Report Number(s):
- LA-UR--95-341; CONF-950201--4; ON: DE95006275
- Country of Publication:
- United States
- Language:
- English
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